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| Semiconductor SRA2219E PNP Silicon Transistor Descriptions * Switching application * Interface circuit and driver circuit application Features * * * * With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. SRA2219E Marking CR Package Code SOT-523 Outline Dimensions 1.600.1. 0.800.1. unit : mm * Equivalent Circuit C(OUT) 1.00 BSC 1 3 0.2~0.3 B(IN) R1 1.600.1 2 R2 E(COMMON) 0.15 Min. 0.700.1 0~0.1 0.1 Min. PIN Connections 1. Base 2. Emitter 3. Collector R1 4.7K R2 10K KSR-4032-000 1 SRA2219E Absolute maximum ratings Characteristic Out Voltage Input Voltage Out Current Power Dissipation Junction Temperature Storage Temperature (Ta=25C) Symbol VO VI IO PD TJ TSTG Ratings -50 -20 -100 150 150 -55 ~ 150 Unit V V mA mW C C Electrical Characteristics Characteristic Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current (Ta=25C) Symbol IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * Test Condition VO=-50V, VI=0 VO=-5V, IO=-10mA IO=-10mA, II=-0.5mA VO=-0.3V, IO=-20mA VO=-5V, IO=-0.1mA VO=-10V, IO=-5mA VI=-5V Min. Typ. Max. 30 -0.3 -0.1 -1.76 -0.82 250 -500 -0.3 -2.5 -1.8 Unit nA V V V MHz mA II * : Characteristic of Transistor Only KSR-4032-000 2 SRA2219E Electrical Characteristic Curves Fig. 1 IO - VI(ON) Fig. 2 IO - VI(OFF) Fig. 3 GI - IO KSR-4032-000 3 |
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